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Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications: 98 (Topics in Applied Physics) Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications: 98 (Topics in Applied Physics) by Masanori Okuyama,Yoshihiro Ishibashi

Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications: 98 (Topics in Applied Physics)

by Masanori Okuyama,Yoshihiro Ishibashi


ISBN 13: 9783540241638

Format: Illustrated (264 pages)
Publisher: Springer
Published: 22 Feb 2005

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Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics): 93 Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics): 93 by Hiroshi Ishiwara,Masanori Okuyama,Yoshihiro Arimoto

Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics): 93

by Hiroshi Ishiwara,Masanori Okuyama,Yoshihiro Arimoto


ISBN 13: 9783540407188

Format: Hardcover (310 pages)
Publisher: Springer
Published: 16 Apr 2004

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New : $405.44  
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Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications: 98 (Topics in Applied Physics) Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications: 98 (Topics in Applied Physics) by Masanori Okuyama, Yoshihiro Ishibashi

Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications: 98 (Topics in Applied Physics)

by Masanori Okuyama, Yoshihiro Ishibashi


ISBN 13: 9783642063305

Format: Paperback (260 pages)
Publisher: Springer
Published: 19 Oct 2010

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New : $284.43  
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Ferroelectric Random Access Memories: Fundamentals and Applications: 93 (Topics in Applied Physics) Ferroelectric Random Access Memories: Fundamentals and Applications: 93 (Topics in Applied Physics) by Hiroshi Ishiwara,Masanori Okuyama,Yoshihiro Arimoto

Ferroelectric Random Access Memories: Fundamentals and Applications: 93 (Topics in Applied Physics)

by Hiroshi Ishiwara,Masanori Okuyama,Yoshihiro Arimoto


ISBN 13: 9783642073847

Format: Paperback (308 pages)
Publisher: Springer Berlin Heidelberg
Published: 19 Feb 2010

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New : $317.94  
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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications: 131 (Topics in Applied Physics, 131) Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications: 131 (Topics in Applied Physics, 131) by Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications: 131 (Topics in Applied Physics, 131)

by Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon


ISBN 13: 9789811512148

Format: Paperback (439 pages)
Publisher: Springer
Published: 24 Mar 2021

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